PART |
Description |
Maker |
NCP51510MNTWG |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165 2M X 18 DDR SRAM, 0.45 ns, PBGA165 36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
|
Micron Technology
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
GS8182S18GD-267 GS8182S18GD-267T GS8182S18GD-267I |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165 18Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块) 2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块(2.584脚,512M的位寄存型的DDR - SDRAM内存模块余)
|
SIEMENS AG
|
M14D5121632A M14D5121632A-2.5BG M14D5121632A-3BG |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|